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The Heywans barrier-layer model, used to explain the presence of the anomalous Pit. characteristic in semiconducting barium titanate, also pi^ .ides an explanation for the sensitivity of the resistivity to voltage tk '
, "Properties of- Semiconductive Barium Titanates", J.
, "Influence of Oxygen Partial Pressure on Properties of Semiconducting Barium Titanate", J.
, "Semiconducting Barium Titanate", J.
H" "Some Aspects of Semiconducting Barium Titanate", Solid State FWrites, 7, 895 (1964).
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